Quasi-Fermi levels in MSM structureMAŁACHOWSKI, M. J; STEPNIEWSKI, J.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 820-823, issn 0038-1101Article

Diagnosing alternative conceptions of Fermi energy among undergraduate studentsSHARMA, Sapna; KUMAR AHLUWALIA, Pardeep.European journal of physics. 2012, Vol 33, Num 4, pp 883-895, issn 0143-0807, 13 p.Article

The presence and lack of Fermi acceleration in nonintegrable billiardsOLIFFSON KAMPHORST, S; LEONEL, E. D; DA SILVA, J. K. L et al.Journal of physics. A, Mathematical and theoretical (Print). 2007, Vol 40, Num 37, issn 1751-8113, F887-F893Article

A quantitative expression for partial Fermi level pinning at semiconductor/redox electrolyte interfacesVAN MEIRHAEGHE, R. L; CARDON, F; GOMES, W. P et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1985, Vol 188, Num 1-2, pp 287-291, issn 0022-0728Article

Fermi level dependent properties of hydrogen in crystalline siliconCSASZAR, W; ENDRÖS, A. L.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 112-115, issn 0921-5107Conference Paper

Anderson model : lattice effects in high dimensionsHÜLSENBECK, G; QI QIN.Solid state communications. 1994, Vol 90, Num 3, pp 195-199, issn 0038-1098Article

EXTREME PRESSURES. III. THE COMPRESSOELECTRIC EFFECT: CHANGE OF THE FERMI ENERGY OF A METAL WITH PRESSURE.LEVITT LS.1975; LETTERE NUOVO CIMENTO; ITAL.; DA. 1975; VOL. 14; NO 4; PP. 128-130; BIBL. 4 REF.Article

Spin polarized photoemission studies of magnetic quantum well statesJOHNSON, P. D.Journal of magnetism and magnetic materials. 1995, Vol 148, Num 1-2, pp 167-171, issn 0304-8853Conference Paper

The use of thermopower and DC electrical conductivity measurements to determine the dynamic resistance and Fermi surface distortion of a thin film of goldSTEELE, C. B; BEYNON, J.International journal of electronics. 1994, Vol 76, Num 5, pp 987-991, issn 0020-7217Conference Paper

A new criterion for the metallicity of elements = Un nouveau critère pour la métallicité des élémentsRAO, C. N. R; GANGULY, P.Solid state communications. 1986, Vol 57, Num 1, pp 5-6, issn 0038-1098Article

INFLUENCE DU NIVEAU DE DOPAGE SUR LA FORME DE LA BANDE LIMITE DE LUMINESCENCE DE L'ARSENIURE D'INDIUMVIL'KOTSKIJ VA; DOMANEVSKIJ DS; KAKANAKOV RD et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 5; PP. 945-955; BIBL. 17 REF.Article

A CONTRIBUTION TO THE DEPENDENCE OF SECONDARY ELECTRON EMISSION FROM THE WORK FUNCTION AND FERMI ENERGYSCHAEFER J; HOELZL J.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 81-86; BIBL. 8 REF.Serial Issue

Chaotic features of multichannel magnetotransport through quantum wires with periodic bend structureVACEK, K; OKIJI, A; KASAI, H et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11412-11415, issn 0163-1829Article

Nonadiabatic surface reaction : mechanism of electron emission in the Cs+O₂ systemBÖTTCHER, A; IMBECK, R; MORGANTE, A et al.Physical review letters. 1990, Vol 65, Num 16, pp 2035-2037, issn 0031-9007Article

Fermi level shift photoconductive organic pigment films measured by Kelvin vibrating capacior methodHIRAMOTO, M; IHARA, K; YOKOYAMA, M et al.Japanese journal of applied physics. 1995, Vol 34, Num 7B, pp 3803-3807, issn 0021-4922, 1Conference Paper

Annihilation des positons dans le tantale et son carbureREMPEL, A. A; DRUZHKOV, A. P; GUSEV, A. I et al.Fizika metallov i metallovedenie. 1989, Vol 68, Num 2, pp 271-279, issn 0015-3230Article

Enhanced magnetic susceptibility of (DI-DCNQI)₂CuTAMURA, M; KASHIMURA, Y; SAWA, H et al.Solid state communications. 1995, Vol 93, Num 7, pp 585-588, issn 0038-1098Article

Schottky barrier formation : Al deposition on GaAs(110)ORTEGA, J; RINCON, R; PEREZ, R et al.Applied surface science. 1992, Vol 60-61, pp 736-741, issn 0169-4332Conference Paper

Selection rules for vibronic coupling in quasi-one-dimensional solids III, Staggered molecular stacksBOZOVIC, I; BOZOVIC, N.Journal of physics. A, mathematical and general. 1990, Vol 23, Num 22, pp 5131-5139, issn 0305-4470Article

Diffusion-limited quasi Fermi level near a semiconductor grain boundaryPIKE, G. E.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3274-3276, issn 0163-1829Article

FERMI LEVELS IN SOLUTIONBOCKRIS JOM; KHAN SUM.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 124-125; BIBL. 14 REF.Article

A PROPOSAL TO INCLUDE DAMPING EFFECTS IN THE SPECTRAL DENSITY APPROACHCAMPANA LS; CARAMICO D'AURIA A; D'AMBROSIO M et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 17; PP. L549-L553; BIBL. 12 REF.Article

MOBILITY OF MAJORITY CARRIERS IN DOPED NON COMPENSATED SILICONTOSIC TI; TJAPKIN DA; JEVTIC MM et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 577-582; BIBL. 28 REF.Article

THE HALL EFFECT IN THE VARIABLE-RANGE-HOPPING REGIMEFRIEDMAN L; POLLAK M.1981; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 4; PP. 487-507; BIBL. 15 REF.Article

AN EXPERIMENTAL STUDY OF THE N-SI/ACETONITRILE INTERFACE: FERMI LEVEL PINNING AND SURFACE STATES INVESTIGATIONCHAZALVIEL JN; TRUONG TB.1981; JOURNAL OF THE AMERICAN CHEMICAL SOCIETY; ISSN 0002-7863; USA; DA. 1981; VOL. 103; NO 25; PP. 7447-7451; BIBL. 32 REF.Article